Semiconductor devices and semiconductor packages including the same

ABSTRACT

Semiconductor devices are provided. A semiconductor device includes an insulating layer and a conductive element in the insulating layer. The semiconductor device includes a first barrier pattern in contact with a surface of the conductive element and a surface of the insulating layer. The semiconductor device includes a second barrier pattern on the first barrier pattern. Moreover, the semiconductor device includes a metal pattern on the second barrier pattern. Related semiconductor packages are also provided.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This U.S. non-provisional patent application claims priority under 35U.S.C. § 119 to Korean Patent Application No. 10-2019-0075216, filed onJun. 24, 2019, in the Korean Intellectual Property Office, the entirecontents of which are hereby incorporated by reference.

BACKGROUND

The present disclosure relates to semiconductor devices and, inparticular, to semiconductor packages including a semiconductor device.A semiconductor package, in which a semiconductor chip is included,makes it possible to easily use the semiconductor chip as a part of anelectronic product. Conventionally, a semiconductor package includes aprinted circuit board (PCB) and a semiconductor chip, which is mountedon the PCB and is electrically connected to the PCB using bonding wiresor bumps. With development of the electronics industry, many studies arebeing conducted to improve reliability and durability of semiconductorpackages.

SUMMARY

Some embodiments of the inventive concepts provide a semiconductordevice with improved reliability. Moreover, some embodiments of theinventive concepts provide a semiconductor package with improvedreliability.

According to some embodiments of the inventive concepts, a semiconductordevice may include a first insulating layer. The semiconductor devicemay include a conductive element in the first insulating layer. Thesemiconductor device may include a first barrier pattern in contact witha surface of the conductive element and a surface of the firstinsulating layer. The semiconductor device may include a second barrierpattern on the first barrier pattern. Moreover, the semiconductor devicemay include a first metal pattern on the second barrier pattern. A widthof the first barrier pattern may be smaller than a width of the firstmetal pattern, and a width of the second barrier pattern may be smallerthan the width of the first barrier pattern.

According to some embodiments of the inventive concepts, a semiconductordevice may include an insulating layer. The semiconductor device mayinclude a conductive element in the insulating layer. The semiconductordevice may include a first barrier pattern in contact with a surface ofthe conductive element and a surface of the insulating layer. Moreover,the semiconductor device may include a metal pattern on the firstbarrier pattern. A thickness of the first barrier pattern may range from10 angstroms (Å) to 100 Å, and the first barrier pattern may includemetal nitride.

According to some embodiments of the inventive concepts, a semiconductorpackage may include a board and a first semiconductor package mounted onthe board. The first semiconductor package may include a re-distributionlayer, a semiconductor chip on the re-distribution layer, and a terminalstructure between the re-distribution layer and the board. There-distribution layer may include an insulating layer and a conductiveelement in the insulating layer. The terminal structure may include afirst barrier pattern and a second barrier pattern that are sequentiallystacked on a surface of the conductive element and a surface of theinsulating layer. The terminal structure may include a metal pattern onthe second barrier pattern, and a connection terminal between the metalpattern and the board. A width of the second barrier pattern may besmaller than a width of the first barrier pattern and a width of themetal pattern. The second barrier pattern may include titanium.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingbrief description taken in conjunction with the accompanying drawings.The accompanying drawings represent non-limiting, example embodiments asdescribed herein.

FIG. 1 is a sectional view illustrating a semiconductor packageincluding a semiconductor device according to some embodiments of theinventive concepts.

FIG. 2A is an enlarged sectional view illustrating a portion A of FIG.1.

FIG. 2B is a plan view illustrating an under-bump metallurgy (UBM) layerof FIG. 2A.

FIG. 2C is an enlarged sectional view illustrating the portion A of FIG.1.

FIG. 2D is an enlarged sectional view illustrating the portion A of FIG.1.

FIG. 3 is a sectional view illustrating a semiconductor packageincluding a semiconductor device according to some embodiments of theinventive concepts.

FIG. 4A is an enlarged sectional view illustrating a portion B of FIG.3.

FIG. 4B is an enlarged sectional view illustrating a portion C of FIG.3.

FIG. 5 is a sectional view illustrating a semiconductor packageincluding a semiconductor device according to some embodiments of theinventive concepts.

FIG. 6 is a sectional view illustrating a chip stack including asemiconductor device according to some embodiments of the inventiveconcepts.

FIGS. 7A to 7D are sectional views illustrating a method of fabricatinga semiconductor package including a semiconductor device, according tosome embodiments of the inventive concepts.

It should be noted that these figures are intended to illustrate thegeneral characteristics of methods, structure and/or materials utilizedin certain example embodiments and to supplement the written descriptionprovided below. These drawings are not, however, to scale and may notprecisely reflect the precise structural or performance characteristicsof any given embodiment, and should not be interpreted as defining orlimiting the range of values or properties encompassed by exampleembodiments. For example, the relative thicknesses and positioning ofmolecules, layers, regions and/or structural elements may be reduced orexaggerated for clarity. The use of similar or identical referencenumbers in the various drawings is intended to indicate the presence ofa similar or identical element or feature.

DETAILED DESCRIPTION

FIG. 1 is a sectional view illustrating a semiconductor packageincluding a semiconductor device according to some embodiments of theinventive concepts. FIG. 2A is an enlarged sectional view illustrating aportion A of FIG. 1. FIG. 2B is a plan view illustrating an under-bumpmetallurgy (UBM) layer of FIG. 2A. FIG. 2C is an enlarged sectional viewillustrating the portion A of FIG. 1. FIG. 2D is an enlarged sectionalview illustrating the portion A of FIG. 1. Accordingly, FIGS. 2A, 2C,and 2D are different examples of the portion A of FIG. 1.

Referring to FIG. 1, a first semiconductor package 1000 may include afirst semiconductor chip 100, a first re-distribution layer 200, firstterminal structures 300, and a mold layer 400. The first semiconductorchip 100 may include a first surface 100 a and a second surface 100 b,which are opposite to each other. The first surface 100 a may be anactive surface of the first semiconductor chip 100, and the secondsurface 100 b may be an inactive surface of the first semiconductor chip100. First chip pads 102 may be disposed on the first surface 100 a ofthe first semiconductor chip 100. The first chip pads 102 may be incontact with the first surface 100 a of the first semiconductor chip100. The first chip pads 102 may include a metallic material, such asaluminum. A first protection layer 104 may be disposed on the firstsurface 100 a of the first semiconductor chip 100. The first protectionlayer 104 may cover side surfaces of the first chip pads 102 and exposeother specific surfaces (e.g., surfaces that are parallel to, and do notcontact, the first surface 100 a) of the first chip pads 102. The firstprotection layer 104 may include a single layer or a plurality oflayers.

The first re-distribution layer 200 may be disposed on the first surface100 a of the first semiconductor chip 100. The first protection layer104 may be disposed between the first surface 100 a of the firstsemiconductor chip 100 and the first re-distribution layer 200. Thefirst re-distribution layer 200 may include first to third insulatinglayers 202 a, 202 b, and 202 c, a plurality of redistributions 204, anda plurality of vias 206. The first to third insulating layers 202 a, 202b, and 202 c may be sequentially stacked on the first protection layer104. The number of the insulating layers is not limited to theillustrated example and may be four or more. The first to thirdinsulating layers 202 a, 202 b, and 202 c may be formed of or include apolymer layer or a silicon oxide layer. The polymer layer may be aphotosensitive polymer (e.g., photosensitive polyimide (PSPI),polybenzoxazole (PBO), phenolic polymer, or benzocyclobutene polymer(BCB)). The redistributions 204 may be disposed in the first and secondinsulating layers 202 a and 202 b. Each of the redistributions 204 maybe provided to correspond to a respective one of the first chip pads102, and each of the redistributions 204 and each of the first chip pads102 corresponding to each other may be electrically and physicallyconnected to each other. Each of the redistributions 204 may include afirst portion 204 a and a second portion 204 b. The first portion 204 amay be provided to penetrate at least the first and second insulatinglayers 202 a and 202 b and may be in contact with the first chip pads102. The second portion 204 b may be disposed on the first portion 204 aand a specific surface 2 of the second insulating layer 202 b. Thesecond portion 204 b may be in contact with the specific surface 2 ofthe second insulating layer 202 b. In some embodiments, the secondportion 204 b may have a line shape. The redistributions 204 may includea plurality of conductive layers. The redistributions 204 may be formedof or include at least one of metallic materials or metal nitrides. Themetallic materials may include at least one of, for example, titanium(Ti), copper (Cu), nickel (Ni), or gold (Au). The metal nitrides mayinclude, for example, titanium nitride (TiN). The plurality of the vias206 may be provided in the third insulating layer 202 c and on theredistributions 204. Each of the vias 206 may be disposed to correspondto a respective one of the redistributions 204. The vias 206 may be incontact with the redistributions 204 and the vias 206 may beelectrically connected to the redistributions 204. The vias 206 may beexposed on (and/or may have respective surfaces that are coplanar with)a specific surface 4 of the third insulating layer 202 c. In someembodiments, the vias 206 may be conductive and thus may be referred toas conductive elements. Other examples of conductive elements that maybe in an insulating layer according to the inventive concepts include aredistribution or a pad.

The first terminal structures 300 may be disposed on the specificsurface 4 of the third insulating layer 202 c. Each of the firstterminal structures 300 may be disposed to correspond to a respectiveone of the vias 206. The first terminal structures 300 may be in contactwith and electrically connected to the vias 206. Referring to FIG. 2B,each of the first terminal structures 300 may include an UBM layer 310and a connection terminal 320. The UBM layer 310 may include a firstbarrier pattern 302, a second barrier pattern 304, a metal pattern 306,and a metal film 308, which are sequentially stacked on the specificsurface 4 of the third insulating layer 202 c.

The first barrier pattern 302 may cover the specific surface 4 of thethird insulating layer 202 c and a specific surface of the via 206,which is exposed by (and/or is coplanar with) the third insulating layer202 c. The first barrier pattern 302 may be in contact with the specificsurface 4 of the third insulating layer 202 c and the specific surfaceof the via 206. The first barrier pattern 302 may be formed to have athin thickness. For example, the thickness of the first barrier pattern302 may range from about 10 angstroms (Å) to about 100 Å. The firstbarrier pattern 302 may be formed of or include at least one of metalnitrides. For example, the first barrier pattern 302 may be formed of orinclude titanium nitride (TiN). The second barrier pattern 304 may bedisposed on the first barrier pattern 302. The second barrier pattern304 may be in contact with a specific surface of the first barrierpattern 302. The second barrier pattern 304 may serve as a diffusionbarrier layer. The second barrier pattern 304 may be formed of orinclude a metallic material. A metallic element included in the secondbarrier pattern 304 may be the same as a metallic element included inthe first barrier pattern 302. For example, the second barrier pattern304 may include titanium (Ti). The metal pattern 306 may be disposed onthe second barrier pattern 304. The metal pattern 306 may be in contactwith a specific surface of the second barrier pattern 304. The metalpattern 306 may include a first metal pattern 306 a and a second metalpattern 306 b, which are sequentially stacked on the specific surface ofthe second barrier pattern 304. The second metal pattern 306 b may bethicker than the first metal pattern 306 a. The first metal pattern 306a and the second metal pattern 306 b may be formed of or include thesame metallic material. The first metal pattern 306 a and the secondmetal pattern 306 b may be formed of or include, for example, copper(Cu).

Referring to FIGS. 2A and 2B, in some embodiments, a width W1 of thefirst barrier pattern 302, a width W2 of the second barrier pattern 304,and a width W3 of the metal pattern 306 may differ from each other. Thewidth W3 of the metal pattern 306 may be larger than the width W1 of thefirst barrier pattern 302 (i.e., W3>W1). The width W1 of the firstbarrier pattern 302 may be larger than the width W2 of the secondbarrier pattern 304 (i.e., W1>W2). In other words, the metal pattern 306may have the largest width W3, and the second barrier pattern 304 mayhave the smallest width W2. A side surface of the first barrier pattern302, a side surface of the second barrier pattern 304, and a sidesurface of the metal pattern 306 may be misaligned to (i.e., may not bevertically aligned with) each other. A width of the first metal pattern306 a may be equal to a width of the second metal pattern 306 b, and aside surface of the first metal pattern 306 a may be aligned to a sidesurface of the second metal pattern 306 b. Side surfaces of the firstbarrier pattern 302, side surfaces of the second barrier pattern 304,and side surfaces of the metal pattern 306 may be perpendicular to thespecific surface 4 of the third insulating layer 202 c and may each besubstantially flat. In some embodiments, referring to FIG. 2C, sidesurfaces of the first barrier pattern 302, side surfaces of the secondbarrier pattern 304, and side surfaces of the metal pattern 306 may beperpendicular to the specific surface 4 of the third insulating layer202 c and may not be flat. For example, the side surfaces of the firstand second barrier patterns 302 and 304 and side surfaces of the metalpattern 306 may each be uneven or rough, as shown in FIG. 2C.

Referring back to FIG. 2A, the metal film 308 may be disposed on themetal pattern 306. The metal film 308 may be in contact with a specificsurface of the metal pattern 306. Though FIG. 2A illustrates a width ofthe metal film 308 to be larger than the width W3 of the metal pattern306, the width of the metal film 308 is not limited thereto. Forexample, the width of the metal film 308 may be larger or smaller thanor equal to the width W3 of the metal pattern 306. The metal film 308may be formed of or include a metallic material. For example, the metalfilm 308 may include nickel (Ni).

The connection terminal 320 may be disposed on the metal film 308. Theconnection terminal 320 may be in contact with a specific surface of themetal film 308. The connection terminal 320 may not cover a side surfaceof the metal pattern 306 or side surfaces of the first and secondbarrier patterns 302 and 304. In other words, the connection terminal320 may be provided to expose the side surface of the metal pattern 306and the side surfaces of the first and second barrier patterns 302 and304. The connection terminal 320 may be spaced apart from the specificsurface 4 of the third insulating layer 202 c, the side surface of themetal pattern 306, the side surface of the first barrier pattern 302,and the side surface of the second barrier pattern 304. The connectionterminal 320 may include a solder ball, a bump, or a pillar. Theconnection terminal 320 may be formed of or include at least one ofmetallic materials (e.g., tin (Sn), lead (Pb), nickel (Ni), gold (Au),silver (Ag), copper (Cu), and bismuth (Bi)).

Referring to FIG. 2D, in some embodiments, the metal film 308 may beomitted, unlike that shown in FIGS. 2A and 2C. In other words, the UBMlayer 310 may not include the metal film 308. Accordingly, theconnection terminal 320 may be in contact with a specific surface of themetal pattern 306.

Referring back to FIG. 1, the mold layer 400 may be disposed on aspecific surface 6 of the first insulating layer 202 a. The mold layer400 may cover the specific surface 6 of the first insulating layer 202 aof the mold layer 400, side surfaces of the first protection layer 104,and side and top surfaces of the first semiconductor chip 100. The moldlayer 400 may include an epoxy molding compound.

The first semiconductor package 1000 may be disposed on a board 2000.For example, the first terminal structures 300 may be disposed on afirst surface of the board 2000. The board 2000 may be, for example, aprinted circuit board (PCB). Outer terminals 500 may be disposed on asecond surface, which is opposite to the first surface of the board2000. Each of the outer terminals 500 may be electrically connected to acorresponding one of the first terminal structures 300. The outerterminals 500 may include solder balls, bumps, or pillars. The outerterminals 500 may be formed of or include at least one of metallicmaterials (e.g., tin (Sn), lead (Pb), nickel (Ni), gold (Au), silver(Ag), copper (Cu), and bismuth (Bi)).

FIG. 3 is a sectional view illustrating a semiconductor packageincluding a semiconductor device according to some embodiments of theinventive concepts. FIG. 4A is an enlarged sectional view illustrating aportion B of FIG. 3. FIG. 4B is an enlarged sectional view illustratinga portion C of FIG. 3.

Referring to FIG. 3, a semiconductor package 4000 may include the firstsemiconductor package 1000 and a second semiconductor package 3000. Thefirst semiconductor package 1000 may be disposed on the secondsemiconductor package 3000. Since the first semiconductor package 1000has been described with reference to FIG. 1, a repeated description ofthe first semiconductor package 1000 will be omitted.

The second semiconductor package 3000 may include a second semiconductorchip 700, a second re-distribution layer 800, second chip pads 806,third chip pads 808, and second terminal structures 840. The secondsemiconductor chip 700 may include a first surface 700 a and a secondsurface 700 b, which are opposite to each other. The first surface 700 amay correspond to an active surface of the second semiconductor chip700, and the second surface 700 b may correspond to an inactive surfaceof the second semiconductor chip 700. The second chip pads 806 may bedisposed on the first surface 700 a of the second semiconductor chip700. The second chip pads 806 may be in contact with the first surface700 a of the second semiconductor chip 700. The second chip pads 806 mayinclude a metallic material, such as aluminum (Al). The third chip pads808 may be disposed on the second surface 700 b of the secondsemiconductor chip 700. The third chip pads 808 may be in contact withthe second surface 700 b of the second semiconductor chip 700. The thirdchip pads 808 may be formed of or include a metallic material, such asaluminum (Al). A second protection layer 830 may be disposed on thesecond surface 700 b of the second semiconductor chip 700. The secondprotection layer 830 may cover the second surface 700 b of the secondsemiconductor chip 700 and side surfaces of the third chip pads 808. Thesecond protection layer 830 may expose specific surfaces (e.g., surfacesthat are parallel to, and do not contact, the second surface 700 b) ofthe third chip pads 808. Through vias 809 may be provided to penetratethe second semiconductor chip 700. The through vias 809 may be disposedbetween the second chip pads 806 and the third chip pads 808 and mayelectrically connect the second chip pads 806 to the third chip pads808. The through vias 809 may be formed of or include at least one ofsemiconductor materials (e.g., silicon) or conductive materials (e.g.,metallic materials).

The second re-distribution layer 800 may be disposed on the firstsurface 700 a of the second semiconductor chip 700. The secondre-distribution layer 800 may include fourth to eighth insulating layers802 a, 802 b, 802 c, 802 d, and 802 e, vias 804, redistributions 810,and pads 820. The fourth to eighth insulating layers 802 a, 802 b, 802c, 802 d, and 802 e may be sequentially stacked on the first surface 700a of the second semiconductor chip 700. The fourth to eighth insulatinglayers 802 a, 802 b, 802 c, 802 d, and 802 e may be formed of or includeat least one of a polymer layer or a silicon oxide layer. The polymerlayer may be a photosensitive polymer (e.g., photosensitive polyimide(PSPI), polybenzoxazole (PBO), phenolic polymer, or benzocyclobutenepolymer (BCB)). The fourth insulating layer 802 a may cover the firstsurface 700 a of the second semiconductor chip 700 and side surfaces ofthe second chip pads 806. The fifth insulating layer 802 b may bedisposed on the fourth insulating layer 802 a. The fifth insulatinglayer 802 b may cover specific surfaces of the second chip pads 806 anda specific surface of the fourth insulating layer 802 a. The vias 804may be disposed in the fifth insulating layer 802 b. The vias 804 may beprovided to penetrate the fifth insulating layer 802 b and may be incontact with the second chip pads 806. The vias 804 may be formed of orinclude at least one of conductive materials. In some embodiments, thevias 804 may be conductive and thus may be referred to as conductiveelements. The sixth insulating layer 802 c may be disposed on the fifthinsulating layer 802 b. The sixth insulating layer 802 c may cover aspecific surface of the fifth insulating layer 802 b.

The redistributions 810 may be disposed in the sixth insulating layer802 c. The redistributions 810 may be provided to penetrate the sixthinsulating layer 802 c. Each of the redistributions 810 may be disposedto correspond to a respective one of the vias 804. The redistributions810 may be in contact with a specific surface 12 of the fifth insulatinglayer 802 b and specific surfaces of the vias 804, which are exposed bythe fifth insulating layer 802 b. In some embodiments, theredistributions 810 may be conductive and thus may be referred to asconductive elements. Referring to FIG. 4A, each of the redistributions810 may include a first barrier pattern 812, a second barrier pattern814, and a metal pattern 816, which are sequentially stacked on thespecific surface 12 of the fifth insulating layer 802 b. The firstbarrier pattern 812 may be in contact with a specific surface of each ofthe vias 804 and the specific surface 12 of the fifth insulating layer802 b. The first barrier pattern 812 may be formed to have a thinthickness. For example, the thickness of the first barrier pattern 812may range from about 10 Å to about 100 Å. The first barrier pattern 812may be formed of or include at least one of metal nitrides. For example,the first barrier pattern 812 may include titanium nitride (TiN). Thesecond barrier pattern 814 may be disposed on the first barrier pattern812. The second barrier pattern 814 may be in contact with a specificsurface of the first barrier pattern 812. The second barrier pattern 814may serve as a diffusion barrier layer. The second barrier pattern 814may be formed of or include at least one of metallic materials. Ametallic element included in the second barrier pattern 814 may be thesame as a metallic element included in the first barrier pattern 812.For example, the second barrier pattern 814 may be formed of or includetitanium (Ti). The metal pattern 816 may be disposed on the secondbarrier pattern 814. The metal pattern 816 may be in contact with aspecific surface of the second barrier pattern 814. The metal pattern816 may include a first metal pattern 816 a and a second metal pattern816 b, which are sequentially stacked on the specific surface of thesecond barrier pattern 814. The second metal pattern 816 b may bethicker than the first metal pattern 816 a. The first metal pattern 816a and the second metal pattern 816 b may be formed of or include thesame metallic material. The first metal pattern 816 a and the secondmetal pattern 816 b may be formed of or include, for example, copper(Cu).

In some embodiments, a width W1_a of the first barrier pattern 812, awidth W2_a of the second barrier pattern 814, and a width W3_a of themetal pattern 816 may differ from each other. The width W3_a of themetal pattern 816 may be larger than the width W1_a of the first barrierpattern 812 (i.e., W3_a>W1_a). The width W1_a of the first barrierpattern 812 may be larger than the width W2_a of the second barrierpattern 814 (i.e., W1_a>W2_a). In other words, the metal pattern 816 mayhave the largest width W3_a, and the second barrier pattern 814 may havethe smallest width W2_a. A side surface of the first barrier pattern812, a side surface of the second barrier pattern 814, and a sidesurface of the metal pattern 816 may be misaligned to each other. Awidth of the first metal pattern 816 a may be equal to a width of thesecond metal pattern 816 b, and a side surface of the first metalpattern 816 a may be aligned to a side surface of the second metalpattern 816 b. Side surfaces of the first barrier pattern 812, sidesurfaces of the second barrier pattern 814, and side surfaces of themetal pattern 816 may be perpendicular to the specific surface 12 of thefifth insulating layer 802 b and may be substantially flat. In someembodiments, however, side surfaces of the first barrier pattern 812,side surfaces of the second barrier pattern 814, and side surfaces ofthe metal pattern 816 may be perpendicular to the specific surface 12 ofthe fifth insulating layer 802 b and may not be flat (i.e., may beuneven).

In some embodiments, the redistributions 204 of the firstre-distribution layer 200 may have the same stacking structure as theredistributions 810 of the second re-distribution layer 800 and mayinclude a plurality of layers, which are substantially the same aslayers constituting the redistributions 810 of the secondre-distribution layer 800. For example, the redistributions 204 mayinclude a first barrier pattern, a second barrier pattern, and a metalpattern. The first barrier patterns of the redistributions 204, whichcorrespond to the first barrier patterns 812 (e.g., see FIG. 4A) of theredistributions 810, may be in contact with the specific surface 2 ofthe second insulating layer 202 b. The metal patterns of theredistributions 204, which correspond to the metal pattern 816 (e.g.,see FIG. 4A) of the redistributions 810, may be in contact with the vias206.

Referring back to FIG. 3, the seventh insulating layer 802 d may bedisposed on a specific surface of the sixth insulating layer 802 c andspecific surfaces of the redistributions 810. The seventh insulatinglayer 802 d may cover the specific surface of the sixth insulating layer802 c and the specific surfaces of the redistributions 810. The pads 820may be disposed in the seventh insulating layer 802 d. The pads 820 maybe provided to penetrate the seventh insulating layer 802 d and to be incontact with the specific surfaces of the redistributions 810. Each ofthe pads 820 may be disposed to correspond to a respective one of theredistributions 810. Referring to FIG. 4B, each of the pads 820 mayinclude a first portion P1 and a second portion P2. The first portion P1may be provided to penetrate the seventh insulating layer 802 d, and thesecond portion P2 may be disposed on a specific surface 14 of theseventh insulating layer 802 d. The second portion P2 may be extendedfrom the first portion P1 to cover the specific surface 14 of theseventh insulating layer 802 d. The first portion P1 of each pad 820 maybe in contact with a respective one of the redistributions 810. Thesecond portion P2 of the pad 820 may be in contact with the specificsurface 14 of the seventh insulating layer 802 d. In some embodiments,the pads 820 may be conductive and thus may be referred to as conductiveelements.

Each of the pads 820 may include a first barrier pattern 822, a secondbarrier pattern 824, a metal pattern 826, a first metal film 828, and asecond metal film 829. The first barrier pattern 822 may cover aspecific surface of the redistribution 810, side surfaces of apenetration hole 20 of the seventh insulating layer 802 d, and thespecific surface 14 of the seventh insulating layer 802 d. The firstbarrier pattern 822 may be in contact with the specific surface of theredistribution 810, the side surfaces of the penetration hole 20 of theseventh insulating layer 802 d, and the specific surface 14 of theseventh insulating layer 802 d. For example, the first barrier pattern822 may be in contact with a specific surface of the metal pattern 816of the redistribution 810, which is exposed by the sixth insulatinglayer 802 c. The first barrier pattern 822 may be formed to have a thinthickness. For example, the thickness of the first barrier pattern 822may range from about 10 Å to about 100 Å. The first barrier pattern 822may be formed of or include at least one of metal nitrides. For example,the first barrier pattern 822 may be formed of or include titaniumnitride (TiN). The second barrier pattern 824 may be disposed on thefirst barrier pattern 822. The second barrier pattern 824 may be incontact with bottom and side surfaces of the first barrier pattern 822,which is placed in the penetration hole 20, and a top surface of thefirst barrier pattern 822, which is placed on the specific surface 14 ofthe seventh insulating layer 802 d. The second barrier pattern 824 maybe used as a diffusion barrier layer. The second barrier pattern 824 maybe formed of or include at least one of metallic materials. A metallicelement included in the second barrier pattern 824 may be the same as ametallic element included in the first barrier pattern 822. For example,the second barrier pattern 824 may be formed of or include titanium(Ti). The metal pattern 826 may be disposed on the second barrierpattern 824. The metal pattern 826 may be in contact with bottom andside surfaces of the second barrier pattern 824, which is placed in thepenetration hole 20, and a top surface of the second barrier pattern824, which is placed on the specific surface 14 of the seventhinsulating layer 802 d. The metal pattern 826 may be provided tocompletely fill the penetration hole 20. The metal pattern 826 mayinclude a first metal pattern 826 a and a second metal pattern 826 b,which are sequentially stacked on the bottom, side, and top surfaces ofthe second barrier pattern 824. The second metal pattern 826 b may bethicker than the first metal pattern 826 a. The first metal pattern 826a and the second metal pattern 826 b may include the same metallicmaterial. For example, the first metal pattern 826 a and the secondmetal pattern 826 b may include copper (Cu). The first metal film 828may be disposed on the metal pattern 826. The first metal film 828 maybe in contact with a specific surface of the metal pattern 826. Thefirst metal film 828 may be formed of or include a metallic material.For example, the first metal film 828 may include nickel (Ni). Thesecond metal film 829 may be disposed on the first metal film 828. Thesecond metal film 829 may be in contact with a specific surface of thefirst metal film 828. The second metal film 829 may be configured toincrease an adhesive strength between the pad 820 and terminals, whichwill be disposed on the pad 820. The second metal film 829 may be formedof or include at least one of metallic materials (e.g., Au).

In some embodiments, a width W1_b of the first barrier pattern 822, awidth W2_b of the second barrier pattern 824, and a width W3_b of themetal pattern 826 may differ from each other. The width W3_b of themetal pattern 826 may be larger than the width W1_b of the first barrierpattern 822 (i.e., W3_b>W1_b). The width W1_b of the first barrierpattern 822 may be larger than the width W2_b of the second barrierpattern 824 (i.e., W1_b>W2_b). In other words, the metal pattern 826 mayhave the largest width W3_b, and the second barrier pattern 824 may havethe smallest width W2_b. Though a width of the first metal film 828 isillustrated in FIG. 4B to be larger than the width W3_b of the metalpattern 826, the width of the first metal film 828 is not limitedthereto. For example, the width of the first metal film 828 may belarger or smaller than or equal to the width W3_b of the metal pattern826.

Side surfaces of the first barrier pattern 822, the second barrierpattern 824, and the metal pattern 826, which are disposed on thespecific surface 14 of the seventh insulating layer 802 d, may bemisaligned to each other. A width of the first metal pattern 826 a maybe equal to a width of the second metal pattern 826 b, and side surfacesof the first metal pattern 826 a and the second metal pattern 826 b,which are disposed on the specific surface 14 of the seventh insulatinglayer 802 d, may be aligned to each other. The side surfaces of thefirst barrier pattern 822, the second barrier pattern 824, and the metalpattern 826 may be perpendicular to the specific surface 14 of theseventh insulating layer 802 d and may be substantially flat. In someembodiments, however, the side surfaces of the first barrier pattern822, the second barrier pattern 824, and the metal pattern 826 may beperpendicular to the specific surface 14 of the seventh insulating layer802 d and may not be flat (i.e., may be uneven).

Referring back to FIG. 3, the eighth insulating layer 802 e may bedisposed on the seventh insulating layer 802 d. The eighth insulatinglayer 802 e may cover the specific surface 14 of the seventh insulatinglayer 802 d and the side surfaces of the second portion P2 (e.g., seeFIG. 4B) of the pads 820. The eighth insulating layer 802 e may beprovided to expose specific (e.g., top) surfaces of the second portionP2 (e.g., see FIG. 4B) of the pads 820. The specific surfaces of thesecond portion P2 (e.g., see FIG. 4B) of the pads 820 may correspond to(e.g., may be) specific (e.g., top) surfaces of the second metal films829 (e.g., see FIG. 4B). The first semiconductor package 1000 may beprovided on the second semiconductor package 3000. In detail, the firstterminal structures 300 of the first semiconductor package 1000 may bedisposed on the pads 820. The connection terminals 320 of the firstterminal structures 300 may be disposed on the pads 820. The connectionterminals 320 may be in contact with the second metal films 829 (e.g.,see FIG. 4B) of the pads 820.

The second terminal structures 840 may be disposed on the third chippads 808. In some embodiments, the second terminal structures 840 mayhave the same stacking structure as the first terminal structures 300 ofthe first semiconductor package 1000 and may include a plurality oflayers, which are substantially the same as layers constituting thefirst terminal structures 300 of the first semiconductor package 1000.For example, the second terminal structures 840 may include a firstbarrier pattern, a second barrier pattern, a metal pattern, metal film,and a first connection terminal. In some embodiments, connectionterminals of the second terminal structures 840, which correspond to theconnection terminals 320 of the first terminal structures 300, may be incontact with a specific (e.g., top) surface of the board 2000, and thefirst barrier patterns of the second terminal structures 840, whichcorrespond to the first barrier patterns 302 (e.g., see FIG. 2A) of thefirst terminal structures 300, may be in contact with specific (e.g.,bottom) surfaces of the third chip pads 808 and a specific (e.g., side)surface of the second protection layer 830. In some embodiments, thesecond terminal structures 840 may be composed of only terminals, suchas solder balls, bumps, or pillars. The second terminal structures 840may be electrically connected to the outer terminals 500.

FIG. 5 is a sectional view illustrating a semiconductor packageincluding a semiconductor device according to some embodiments of theinventive concepts.

Referring to FIG. 5, the first semiconductor package 1000 may bedisposed on a redistribution substrate 900. The redistribution substrate900 may include first to fifth insulating layers 902 a, 902 b, 902 c,902 d, and 902 e, first and second pads 904 and 908, redistributions905, and vias 906. The second to fifth insulating layers 902 b, 902 c,902 d, and 902 e may be sequentially stacked on the first insulatinglayer 902 a. The first pads 904 may be provided to penetrate the fourthinsulating layer 902 d and may be in contact with side surfaces of thefifth insulating layer 902 e. The first pads 904 of the redistributionsubstrate 900 may have the same stacking structure as the pads 820 ofthe second re-distribution layer 800 shown in FIGS. 3 and 4B and mayinclude a plurality of layers, which are substantially the same aslayers constituting the pads 820 of the second re-distribution layer800. For example, the first pads 904 may include a first barrierpattern, a second barrier pattern, a metal pattern, a first metal film,and a second metal film. In some embodiments, the connection terminals320 of the first semiconductor package 1000 may be in contact with thesecond metal films of the first pads 904, which correspond to the secondmetal films 829 of the pads 820 (e.g., see FIG. 4B). In addition, thefirst barrier patterns of the first pads 904, which correspond to thefirst barrier pattern 822 of the pads 820 (e.g., see FIG. 4B), may be incontact with the side surfaces of the fifth insulating layer 902 e.

The redistributions 905 of the redistribution substrate 900 may bedisposed in the third insulating layer 902 c. The redistributions 905may have the same stacking structure as the redistributions 810 of thesecond re-distribution layer 800 described with reference to FIGS. 3 and4A and may include a plurality of layers, which are substantially thesame as layers constituting the redistributions 810 of the secondre-distribution layer 800. For example, the redistributions 905 mayinclude a first barrier pattern, a second barrier pattern, and a metalpattern. In some embodiments, the first barrier patterns of theredistributions 905, which correspond to the first barrier patterns 812of the redistributions 810 (e.g., see FIG. 3A), may be in contact with aspecific surface (e.g., a top surface) of the second insulating layer902 b and the vias 906, and the metal patterns of the redistributions905, which correspond to the metal patterns 816 of the redistributions810 (e.g., see FIG. 3A), may be in contact with the first pads 904. Thevias 906 may be provided to penetrate the second insulating layer 902 b.The second pads 908 may be disposed in the first insulating layer 902 a.The second pads 908 may be in contact with the vias 906. The second pads908 may be formed of or include at least one of metallic materials(e.g., aluminum). In some embodiments, the second pads 908 may have thesame stacking structure as the first pads 904 and may include aplurality of layers, which are substantially the same as layersconstituting the first pads 904. For example, the second pads 908 mayinclude a first barrier pattern, a second barrier pattern, a metalpattern, a first metal film, and a second metal film. Outer terminals910 may be disposed on the second pads 908. The outer terminals 910 mayhave the same stacking structure as the first terminal structures 300 ofthe first semiconductor package 1000 and may include a plurality oflayers, which are substantially the same as layers constituting thefirst terminal structures 300 of the first semiconductor package 1000.In some embodiments, the outer terminals 910 may be composed of onlyterminals, such as solder balls, bumps, or pillars.

FIG. 6 is a sectional view illustrating a chip stack including asemiconductor device according to some embodiments of the inventiveconcepts.

A chip stack 5000 may include a first chip 920, a second chip 922, athird chip 924, a fourth chip 926, and a chip mold layer 928. The secondchip 922 may be stacked on the first chip 920, the third chip 924 may bestacked on the second chip 922, and the fourth chip 926 may be stackedon the third chip 924. In other words, the second chip 922, the thirdchip 924, and the fourth chip 926 may be sequentially stacked on thefirst chip 920. As an example, the first chip 920 may be a semiconductorlogic chip, and the second to fourth chips 922, 924, and 926 may besemiconductor memory chips. A width of the first chip 920 may be greaterthan widths of the second to fourth chips 922, 924, and 926.

Through vias 930 may be disposed in the first to third chips 920, 922,and 924. The through vias 930 may be provided to penetrate the first tothird chips 920, 922, and 924. The through vias 930 may not be providedin the fourth chip 926. The through vias 930 may be formed of or includeat least one of metallic materials (e.g., copper, tungsten, aluminum) orsemiconductor materials (e.g., silicon). Re-distribution layers 940 maybe disposed on top and bottom surfaces of the first to third chips 920,922, and 924. The re-distribution layers 940 may include insulatinglayers 942 and pads 944. The insulating layers 942 may cover the top andbottom surfaces of the first to third chips 920, 922, and 924. The pads944 may be provided to penetrate the insulating layers 942 and may beextended onto specific surfaces of the insulating layers 942. In someembodiments, the re-distribution layers 940 may further include vias andredistributions. The pads 944 may have the same stacking structure asthe pads 820 shown in FIG. 4B and may include a plurality of layers,which are substantially the same as layers constituting the pads 820.For example, each of the pads 944 may include a first barrier pattern, asecond barrier pattern, a metal pattern, a first metal film, and asecond metal film. The first barrier patterns of the pads 944 may be incontact with specific surfaces of the insulating layers 942.

The pads 944, which are disposed on the top and bottom surfaces of thefirst chip 920, may be disposed on the through vias 930 penetrating thefirst chip 920. The pads 944, which are disposed on the top and bottomsurfaces of the second chip 922, may be disposed on top and bottomsurfaces of the through vias 930 penetrating the second chip 922. Thepads 944, which are disposed on the top and bottom surfaces of the thirdchip 924, may be disposed on top and bottom surfaces of the through vias930 penetrating the third chip 924. In addition, pads 950, which aredisposed on a bottom surface of the fourth chip 926, may be disposed tocorrespond to (e.g., may be on) the pads 944 disposed on a top surfaceof the third chip 924. The pads 950, which are disposed on the bottomsurface of the fourth chip 926, may have the same stacking structure asthe pads 820 shown in FIG. 4B and may include a plurality of layers,which are substantially the same as layers constituting the pads 820.For example, each of the pads 820 may include a first barrier pattern, asecond barrier pattern, a metal pattern, a first metal film, and asecond metal film.

First terminals 960 may be disposed on the pads 944, which are disposedon the bottom surface of the first chip 920. Second terminals 962 may bedisposed between the first chip 920 and the second chip 922, between thesecond chip 922 and the third chip 924, and between the third chip 924and the fourth chip 926. For example, the second terminals 962 may bedisposed between the pads 944 on the top surface of the first chip 920and the pads 944 on the bottom surface of the second chip 922. Thesecond terminals 962 may be disposed between the pads 944 on the topsurface of the second chip 922 and the pads 944 on the bottom surface ofthe third chip 924. In addition, the second terminals 962 may bedisposed between the pads 944 on the top surface of the third chip 924and the pads 950 on the bottom surface of the fourth chip 926. The firstand second terminals 960 and 962 may be formed of or include at leastone of metallic materials (e.g., tin (Sn), lead (Pb), nickel (Ni), gold(Au), silver (Ag), copper (Cu), and bismuth (Bi)).

The chip mold layer 928 may be disposed on the top surface of the firstchip 920. The chip mold layer 928 may be disposed on the top surface ofthe first chip 920 to cover side surfaces of the second to fourth chips922, 924, and 926. The chip mold layer 928 may fill a space between thefirst chip 920 and the second chip 922, a space between the second chip922 and the third chip 924, and a space between the third chip 924 andthe fourth chip 926. The chip mold layer 928 may be formed of or includean epoxy molding compound (EMC).

FIGS. 7A to 7D are sectional views illustrating a method of fabricatinga semiconductor package including a semiconductor device, according tosome embodiments of the inventive concepts.

Referring to FIG. 7A, the first chip pads 102 may be formed on the firstsurface 100 a of the first semiconductor chip 100. The formation of thefirst chip pads 102 may include forming a conductive layer on the firstsurface 100 a of the first semiconductor chip 100 and then patterningthe conductive layer. The first protection layer 104 may be formed onthe first surface 100 a of the first semiconductor chip 100. The firstprotection layer 104 may cover the side surfaces of the first chip pads102 and expose specific surfaces of the first chip pads 102. The moldlayer 400 may be formed to cover side surfaces of the firstsemiconductor chip 100, side surfaces of the first protection layer 104,and the second surface 100 b of the first semiconductor chip 100.

The first insulating layer 202 a and the second insulating layer 202 bmay be sequentially formed on the first chip pads 102, the firstprotection layer 104, and the mold layer 400. The first insulating layer202 a may be formed to conformally cover a specific surface of the firstprotection layer 104, specific surfaces of the first chip pads 102exposed by the first protection layer 104, and a specific surface of themold layer 400. The second insulating layer 202 b may be formed on thefirst insulating layer 202 a. The redistributions 204 may be formed inthe first and second insulating layers 202 a and 202 b and on thespecific surface 2 of the second insulating layer 202 b. The formationof the redistributions 204 may include forming first penetration holesH1 to penetrate the first and second insulating layers 202 a and 202 b,forming a layer to fill the first penetration holes H1 and to cover thespecific surface 2 of the second insulating layer 202 b, and patterningthe layer. In some embodiments, the first penetration holes H1 may beformed to expose specific surfaces of the first chip pads 102. Theredistributions 204 may include a single layer or a plurality of layers.The redistributions 204 may be formed of or include at least one ofmetallic or metal nitride layers. The third insulating layer 202 c maybe formed on the specific surface 2 of the second insulating layer 202b. The third insulating layer 202 c may be formed to cover specific andside surfaces of the redistributions 204, which are formed on thespecific surface 2 of the second insulating layer 202 b. The vias 206may be disposed in the third insulating layer 202 c. The formation ofthe vias 206 may include forming second penetration holes H2 in thethird insulating layer 202 c and filling the second penetration holes H2with a metallic material.

A first barrier layer 52, a second barrier layer 54, and a seed layer 56may be sequentially formed on the specific surface 4 of the thirdinsulating layer 202 c. The first barrier layer 52 may be in contactwith the specific surface 4 of the third insulating layer 202 c and thespecific surfaces of the vias 206. The first barrier layer 52 may beformed using a deposition process (e.g., PVD, CVD, or ALD). The firstbarrier layer 52 may be formed of or include at least one of metalnitrides. For example, the first barrier layer 52 may be formed of orinclude a titanium nitride layer (TiN). The first barrier layer 52 maybe formed to a thickness, which is chosen to reduce influence onresistance and to prevent the second barrier layer 54 from beingexcessively etching in a subsequent etching process. The first barrierlayer 52 may be formed to have a thickness of about 10 Å to about 100 Å.The second barrier layer 54 may be formed on the first barrier layer 52.The second barrier layer 54 may be formed using a deposition process(e.g., physical vapor deposition (PVD), chemical vapor deposition (CVD),or atomic layer deposition (ALD)). The second barrier layer 54 may beformed of or include at least one of metallic materials. For example,the second barrier layer 54 may be formed of or include titanium (Ti).The seed layer 56 may be formed on the second barrier layer 54. The seedlayer 56 may be formed using a deposition process (e.g., PVD, CVD, orALD). The seed layer 56 may be a layer that will be used in a subsequentplating process. The seed layer 56 may be used to improve a depositionrate of metal in the subsequent plating process. The seed layer 56 maybe formed of or include at least one of metallic materials. For example,the seed layer 56 may be formed of or include copper (Cu).

Referring to FIG. 7B, a first plating layer 58 and a second platinglayer 60 may be sequentially formed on the seed layer 56. The firstplating layer 58 and the second plating layer 60 may be formed using aplating process. In some embodiments, the first plating layer 58 may beformed of or include copper (Cu), and the second plating layer 60 may beformed of or include nickel (Ni). The first plating layer 58 and thesecond plating layer 60 may be formed in an in-situ manner.

Terminal patterns 62 may be formed on the second plating layer 60. As anexample, the terminal patterns 62 may be formed by forming a metal layeron the second plating layer 60 and patterning the metal layer. In someembodiments, the formation of the terminal patterns 62 may includeforming a sacrificial layer with holes on the second plating layer 60,filling the holes with a metallic material, and then removing thesacrificial layer. The terminal patterns 62 may be formed of or includeat least one of metallic materials (e.g., tin (Sn), lead (Pb), nickel(Ni), gold (Au), silver (Ag), copper (Cu), and bismuth (Bi)).

Referring to FIG. 7C, the second plating layer 60, the first platinglayer 58, and the seed layer 56 may be sequentially patterned using theterminal patterns 62 as an etch mask. Accordingly, the first metalpatterns 306 a, the second metal patterns 306 b, and the metal films 308may be sequentially formed on the second barrier layer 54. The terminalpatterns 62 may be disposed on the metal films 308. The patterningprocess may be performed using a wet etching process. The wet etchingprocess may be performed using a copper etching solution. Although themetal films 308 are illustrated to have widths larger than widths of thefirst and second metal patterns 306 a and 306 b, the inventive conceptsare not limited to this example. For example, the metal films 308 may beformed to have widths that are smaller than or equal to the widths ofthe first and second metal patterns 306 a and 306 b, depending on aprocess condition for the etching or patterning process. Since thecopper etching solution has an etch selectivity with respect to theterminal patterns 62, the terminal patterns 62 may not be removed duringthe etching process.

Referring to FIG. 7D, the second barrier layer 54 and the first barrierlayer 52 may be sequentially patterned using the terminal patterns 62,the metal films 308, and the first and second metal patterns 306 a and306 b as etch mask. Accordingly, the first barrier pattern 302 and thesecond barrier pattern 304 may be sequentially formed on the specificsurface 4 of the third insulating layer 202 c. The second barrierpattern 304 may be formed between the first barrier pattern 302 and thefirst metal pattern 306 a. The patterning process may be performed usinga wet etching process. The wet etching process may be performed using atitanium etching solution. If the wet etching process is performed usingthe titanium etching solution, an etch rate of the first barrier layer52 may be lower than an etch rate of the second barrier layer 54. Thus,an etch amount of the second barrier pattern 304 may be greater thanthat of the first barrier pattern 302, and thus, the second barrierpattern 304 may be formed to have a width smaller than a width of thefirst barrier pattern 302. The first barrier pattern 302 may be formedto have a width smaller than widths of the first and second metalpatterns 306 a and 306 b.

According to some embodiments of the inventive concepts, the firstbarrier pattern 302, which is formed of metal nitride, may be formedbetween the second barrier pattern 304 and the third insulating layer202 c, and this may make it possible to protect/prevent an adhesionstrength between the second barrier pattern 304 and the third insulatinglayer 202 c from being reduced by a metal oxide, which may be formedbetween the third insulating layer 202 c and the second barrier pattern304 when the second barrier pattern 304, which is formed of a metallicmaterial, is directly formed on the third insulating layer 202 c.

Referring back to FIG. 1, the connection terminals 320 may be formed byperforming a reflow process on the terminal patterns 62. The reflowprocess may be performed using a low temperature process. The connectionterminals 320 may be mounted on a first (e.g., top) surface of the board2000. The connection terminals 320 may be electrically connected to theouter terminals 500, which are formed on a second (e.g., bottom) surfacefacing the first surface of the board 2000.

According to some embodiments of the inventive concepts, a metal nitridebarrier layer may be formed between an insulating layer and a metalbarrier layer of a redistribution, a pad, or an UBM layer. The metalnitride barrier layer may inhibit/prevent a metal oxide layer from beingformed between the metal barrier layer and the insulating layer.Accordingly, it may be possible to improve the reliability of asemiconductor device.

Though example embodiments of the inventive concepts have beenparticularly shown and described, it will be understood by one ofordinary skill in the art that variations in form and detail may be madetherein without departing from the scope of the attached claims.

What is claimed is:
 1. A semiconductor device comprising: a firstinsulating layer; a conductive element in the first insulating layer; afirst barrier pattern in contact with a surface of the conductiveelement and a surface of the first insulating layer; a second barrierpattern on the first barrier pattern; and a first metal pattern on thesecond barrier pattern, wherein the second barrier pattern is separatedfrom the first insulating layer by the first barrier pattern, wherein awidth of the first barrier pattern is smaller than a width of the firstmetal pattern, and wherein a width of the second barrier pattern issmaller than the width of the first barrier pattern.
 2. Thesemiconductor device of claim 1, wherein the first barrier patterncomprises metal nitride.
 3. The semiconductor device of claim 1, whereinthe first barrier pattern has a thickness ranging from 10 angstroms (Å)to 100 Å.
 4. The semiconductor device of claim 1, further comprising: ametal film on the first metal pattern; and a connection terminal on andin contact with the metal film, wherein the first metal patterncomprises copper, and wherein the metal film comprises nickel.
 5. Thesemiconductor device of claim 1, wherein the first insulating layercomprises a polymer or oxide layer.
 6. The semiconductor device of claim1, further comprising a connection terminal on the first metal pattern,wherein the connection terminal does not cover a side surface of thefirst barrier pattern and a side surface of the second barrier pattern.7. The semiconductor device of claim 1, further comprising: a firstmetal film on the first metal pattern; a second metal film on the firstmetal film; and a connection terminal on and in contact with the secondmetal film, wherein the first metal pattern comprises copper, whereinthe first metal film comprises nickel, and wherein the second metal filmcomprises gold.
 8. The semiconductor device of claim 1, wherein theconductive element comprises: a third barrier pattern; a second metalpattern between the third barrier pattern and the first barrier pattern;and a fourth barrier pattern between the third barrier pattern and thesecond metal pattern, wherein the first barrier pattern is in contactwith the second metal pattern.
 9. The semiconductor device of claim 1,wherein a side surface of the first barrier pattern, a side surface ofthe second barrier pattern, and a side surface of the first metalpattern are respective flat surfaces that are perpendicular to aninterface between the first barrier pattern and the conductive element.10. The semiconductor device of claim 1, wherein a side surface of thefirst barrier pattern, a side surface of the second barrier pattern, anda side surface of the first metal pattern are respective unevensurfaces.
 11. The semiconductor device of claim 1, further comprising asecond insulating layer on the first insulating layer to cover a sidesurface of the first barrier pattern, a side surface of the secondbarrier pattern, and a side surface of the first metal pattern.
 12. Thesemiconductor device of claim 1, wherein the conductive element is avia, a redistribution, or a pad, and wherein a width of the conductiveelement is smaller than the width of the first barrier pattern.
 13. Thesemiconductor device of claim 1, wherein the first barrier pattern, thesecond barrier pattern, and the first metal pattern provide aredistribution, a pad, or an under-bump metallurgy (UBM) layer.
 14. Asemiconductor device comprising: an insulating layer; a conductiveelement in the insulating layer; a first barrier pattern in contact witha surface of the conductive element and a surface of the insulatinglayer; and a metal pattern on the first barrier pattern, a secondbarrier pattern between the metal pattern and the first barrier pattern,wherein the second barrier pattern is separated from the insulatinglayer by the first barrier pattern; wherein a thickness of the firstbarrier pattern ranges from 10 angstroms (Å) to 100 Å, and wherein thefirst barrier pattern comprises metal nitride.
 15. The semiconductordevice of claim 14, wherein the second barrier pattern comprises ametallic material.
 16. The semiconductor device of claim 14, wherein aside surface of the first barrier pattern is not vertically aligned witha side surface of the metal pattern, and wherein a width of the metalpattern is larger than a width of the first barrier pattern.
 17. Asemiconductor device comprising: an insulating layer; a conductiveelement in the insulating layer; a first barrier pattern and a secondbarrier pattern that are stacked on a surface of the conductive elementand a surface of the insulating layer, wherein a first surface of thefirst barrier pattern contacts the surface of the conductive element andthe surface of the insulating layer, and wherein a second surface of thefirst barrier pattern that is opposite the first surface contacts thesecond barrier pattern; and a metal pattern on the second barrierpattern, wherein a width of the second barrier pattern is smaller than awidth of the first barrier pattern and a width of the metal pattern, andwherein the second barrier pattern comprises titanium.
 18. Thesemiconductor device of claim 17, wherein the first barrier patterncomprises titanium nitride, and wherein the surface of the conductiveelement is coplanar with the surface of the insulating layer.
 19. Thesemiconductor device of claim 17, wherein a thickness of the firstbarrier pattern ranges from 10 angstroms (Å) to 100 Å.